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Full Record Details
Persistent URL
http://purl.org/net/epubs/work/20741
Record Status
Checked
Record Id
20741
Title
Optimisation of silicon FEAs fabrication for space application,
Contributors
L Wang
,
R Stevens
,
S E Huq
,
I Loader
,
B J Kent
,
K L Aplin
,
J She
Abstract
Optimization of fabrication of silicon field-emission arrays has been carried out on 4 in. silicon wafers for field-emission electric propulsion neutralizer application. A mixture of SF6, O2, and Ar for silicon tip etches has been optimized to improve the uniformity and process repeatability. A thin aluminum nitride (AlN) film has been coated on gated emitter arrays to enhance the field at the tip and to protect tips from ion bombardment. A statistical analysis of emission characteristic shows a narrow distribution of the turn-on voltage from array to array, which makes it possible to achieve a few milliamperes current emission by connecting several arrays in parallel. Lifetime tests over 1000 h have been carried out on single arrays, producing in excess of 10 µA of emission current under continuous mode of operation.
Organisation
CCLRC
,
SSTD
,
CMF
,
EID
Keywords
Physics
,
07.87.+v
,
79.70.+q
,
85.45.Db
Funding Information
Related Research Object(s):
Licence Information:
Language
English (EN)
Type
Details
URI(s)
Local file(s)
Year
Journal Article
J Vac Sci Technol B
22, no. 3 (2004): 1071-1023.
doi:10.1116/1.1736641
2004
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