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Full Record Details
Persistent URL
http://purl.org/net/epubs/work/29452
Record Status
Checked
Record Id
29452
Title
Low-energy grazing-angle argon ion irradiation of silicon at elevated temperatures: a viable option for cleaning?
Contributors
PC Zalm (Philips)
,
JA van den Berg (Salford U.)
,
JGM van Berkum (Philips)
,
P Bailey (CCLRC Daresbury Lab.)
,
TCQ Noakes (CCLRC Daresbury Lab.)
Abstract
In recent publications, it has been suggested that atomically clean, flat, crystalline silicon surfaces can be obtained by low-energy (0.1-1 keV) oblique-angle (45° off-normal) argon-ion bombardment at mildly elevated target temperatures (~500 °C). Here, this procedure has been applied to a multiple boron delta-doped Si structure. It leads to a massive relocation of subsurface doping atoms because of the accompanying injection of point defects into the bulk. This greatly affects the usefulness of the proposed cleaning method and shows that it is hazardous to base claims of quality solely on results obtained with surface-sensitive (~1 nm) analytical techniques.
Organisation
CCLRC
,
SND
,
MEIS
Keywords
Funding Information
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Language
English (EN)
Type
Details
URI(s)
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Year
Journal Article
Appl Phys Lett
76 (2000): 1887-1889.
doi:10.1063/1.126201
2000
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