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Persistent URL	http://purl.org/net/epubs/work/29455
Record Status	Checked
Record Id	29455
Title	Cluster formation during annealing of ultra-low-energy boron-implanted silicon
Contributors	EJH Collart (Applied), AJ Murell (Applied), MA Foad (Applied), JA van den Berg (Salford U.), S Zhang (Salford U.), DG Armour (Salford U.), RD Goldberg (Salford U.), TS Wang (Sheffield U.), AG Cullis (Sheffield U.), T Clarysse (IMEC), W Vandervorst (IMEC)
Abstract	The clustering of low-energy ion-implanted boron has been investigated. Two 1 keV boron implantations at doses of 1×1015 and 5×1015 cm?2 were annealed for 10 s between 700 and 1100 °C. The evolution of the boron concentration profiles was monitored using secondary ion mass spectrometry. Electrical activation was measured with four-point-probe measurements and spreading resistance profiling. The displaced Si concentration profiles were determined from medium-energy ion-scattering measurements.
Organisation	CCLRC , SND , MEIS
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Language	English (EN)

Type	Details	URI(s)	Local file(s)	Year
Journal Article	J Vac Sci Technol B 18, no. 1 (2000): 435-439.	doi:10.1116/1.591207		2000