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Full Record Details
Persistent URL
http://purl.org/net/epubs/work/30255
Record Status
Checked
Record Id
30255
Title
Establishing an accurate depth-scale calibration in the top few nanometers of an ultrashallow implant profile
Contributors
CF McConville (Warwick U.)
,
SH Al-Harthi (Warwick U.)
,
MG Dowsett (Warwick U.)
,
TJ Ormsby (Warwick U.)
,
FS Gard
,
B Guzman (Politécnica de Madrid)
,
TCQ Noakes (CCLRC Daresbury Lab.)
,
P Bailey (CCLRC Daresbury Lab.)
Abstract
A method to accurately determine the sputter yield of the matrix from the earliest stages of a sputter profile is described. Using the technique of medium-energy ion-scattering spectroscopy, this method provides data that enable a depth scale to be established from subnanometer depths onward. It may be adapted to samples containing a thin amorphous surface layer (e.g., a preamorphized shallow implant) or to crystalline surfaces containing a heavy-element marker layer. In this Brief Report we have used this method to interpret the near-surface profile using erosion-rate data obtained from a 1-keV boron implant into a germanium preamorphized silicon (001) surface.
Organisation
CCLRC
,
SND
,
MEIS
Keywords
Physics
Funding Information
Related Research Object(s):
Licence Information:
Language
English (EN)
Type
Details
URI(s)
Local file(s)
Year
Journal Article
Phys Rev B
65 (2002): 113412.
doi:10.1103/PHYSREVB.65.113412
2002
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