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Full Record Details
Persistent URL
http://purl.org/net/epubs/work/30261
Record Status
Checked
Record Id
30261
Title
Optical and ion-scattering study of SiO2 layers thermally grown on 4H-SiC
Contributors
DJ Hayton (Aberystwyth U.)
,
TE Jenkins (Aberystwyth U.)
,
P Bailey (CCLRC Daresbury Lab.)
,
TCQ Noakes (CCLRC Daresbury Lab.)
Abstract
Medium energy ion scattering, Fourier transform infrared spectroscopy and spectroscopic ellipsometry measurements have been performed on thermally grown SiO2 layers on 4H silicon carbide. The data suggest the presence of a layer at the oxide–SiC interface consisting of both disordered Si and C. The infrared data indicate that the oxide layer is denser than fused silica. The thickness of the oxide layers as measured by spectroscopic ellipsometry agrees well with the values obtained from ion scattering.
Organisation
CCLRC
,
SND
,
MEIS
Keywords
Physics
Funding Information
Related Research Object(s):
Licence Information:
Language
English (EN)
Type
Details
URI(s)
Local file(s)
Year
Journal Article
Semicond Sci Technol
17 (2002): L29-L32.
doi:10.1088/0268-1242/17/7/101
2002
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