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Persistent URL	http://purl.org/net/epubs/work/30266
Record Status	Checked
Record Id	30266
Title	Determination of the variation in sputter yield in the SIMS transient region using MEIS
Contributors	MG Dowsett (Warwick U.), TJ Ormsby (Warwick U.), FS Gard (Warwick U.), SH Al-Harthi (Warwick U.), B Guzmán (Universidad Politécnica de Madrid), CF McConville (Warwick U.), TCQ Noakes (CCLRC Daresbury Lab.), P Bailey (CCLRC Daresbury Lab.)
Abstract	The near-surface erosion rate in SIMS depth profiling is significantly different from that in the bulk, and varies with primary ion dose across the transient region in a currently unknown manner. Here, we describe a new method using medium energy ion scattering to measure the transient matrix sputter yield, and hence determine the erosion rate. We demonstrate its use in converting the raw dose and yield scales in a shallow depth profile to depth and concentration. We show that the surface erosion rate may be more than 10 times that in the bulk, and that the ion yield for boron in silicon apparently stabilizes before the sputter yield.
Organisation	CCLRC , SND , MEIS
Keywords	Physics
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Language	English (EN)

Type	Details	URI(s)	Local file(s)	Year
Journal Article	Appl Surf Sci 203-204 (2002): 3633-366.	doi:10.1016/S0169-4332(02)00879-6		2002