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Full Record Details
Persistent URL
http://purl.org/net/epubs/work/30280
Record Status
Checked
Record Id
30280
Title
Characterization of hafnium aluminate gate dielectrics deposited by liquid injection metalorganic chemical vapor deposition
Contributors
RJ Potter (Liverpool U.)
,
PA Marshall (Liverpool U.)
,
PR Chalker (Liverpool U.)
,
S Taylor (Liverpool U.)
,
AC Jones (Liverpool U.)
,
TCQ Noakes (CCLRC Daresbury Lab.)
,
P Bailey (CCLRC Daresbury Lab.)
Abstract
Thin films of hafnium aluminate, with varying aluminum content, have been deposited by liquid injection metalorganic chemical vapor deposition using the metal alkoxide precursors hafnium methyl-methoxy-propanolate and aluminum iso-propoxide. X-ray diffraction analysis showed that the films were amorphous at aluminum concentrations above 7 at.?%. Post deposition annealing indicated that the oxide-transition temperature from amorphous to crystalline increased with aluminum content. Medium-energy ion scattering showed that up to 900?°C, 900?°C, internal oxidation of the silicon substrate had been inhibited. The capacitance–voltage characteristics of the films significantly improved following annealing in dry air.
Organisation
CCLRC
,
SND
,
MEIS
Keywords
Funding Information
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Language
English (EN)
Type
Details
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Year
Journal Article
Appl Phys Lett
84, no. 20 (2004): 4119-4121.
doi:10.1063/1.1755424
2004
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