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Persistent URL	http://purl.org/net/epubs/work/49514
Record Status	Checked
Record Id	49514
Title	Chemical and optical profiling of ultra thin high-k dielectrics on silicon
Contributors	S Bernardini (Manchester U.), M MacKenzie (Glasgow U.), O Buiu (Liverpool U.), P Bailey (STFC Daresbury Lab.), TCQ Noakes (STFC Daresbury Lab.), WM Davey (Liverpool U.), B Hamilton (Manchester U.), S Hall (Liverpool U.)
Abstract	The thickness of HfO2 and hafnium silicate HfxSi1-xOy thin films with a range of compositions are investigated using three complementary analytical techniques. We compare results obtained from Medium Energy Ion Scattering spectroscopy, spectroellipsometry and high-resolution Transmission Electron Microscopy. Our results demonstrate that the thickness of the silicate layers decreases with the Hf content.
Organisation	SRS , MEIS , STFC
Keywords	Materials
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Language	English (EN)

Type	Details	URI(s)	Local file(s)	Year
Journal Article	Thin Solid Films 517 (2008): 459-461.	doi:10.1016/j.tsf.2008.08.048		2008