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Full Record Details
Persistent URL
http://purl.org/net/epubs/work/52863
Record Status
Checked
Record Id
52863
Title
InAs/GaSb(001) valence-band offset : independence of interface composition and strain
Contributors
B Montanari (INFM & Scuola Internazionale Superiore di Studi Avanzati )
,
M Peressi (INFM & Università di Trieste)
,
S Baroni ( NFM & Scuola Internazionale Superiore di Studi Avanzati (SISSA))
,
E Molinari (INFM & Università di Modena)
Abstract
The InAs/GaSb(001) valence‐band offset is calculated for the two inequivalent GaAs‐like and InSb‐like interfaces and found to coincide to within ≊30 meV. This result is rationalized and generalized to arbitrary composition profiles and induced strain by using a simple model, based on the linear response theory, which is validated by a number of accurate first‐principles calculations for intermixed interfaces. © 1996 American Institute of Physics.
Organisation
CCLRC
,
CSE
,
CSE-CMSG
Keywords
Materials
,
InAs
,
GaSb
,
valence band offset
,
VBO
Funding Information
Related Research Object(s):
Licence Information:
Language
English (EN)
Type
Details
URI(s)
Local file(s)
Year
Journal Article
Appl Phys Lett
69, no. 21 (1996).
doi:10.1063/1.118015
1996
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