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Persistent URL	http://purl.org/net/epubs/work/52863
Record Status	Checked
Record Id	52863
Title	InAs/GaSb(001) valence-band offset : independence of interface composition and strain
Contributors	B Montanari (INFM & Scuola Internazionale Superiore di Studi Avanzati ), M Peressi (INFM & Università di Trieste), S Baroni ( NFM & Scuola Internazionale Superiore di Studi Avanzati (SISSA)), E Molinari (INFM & Università di Modena)
Abstract	The InAs/GaSb(001) valence‐band offset is calculated for the two inequivalent GaAs‐like and InSb‐like interfaces and found to coincide to within ≊30 meV. This result is rationalized and generalized to arbitrary composition profiles and induced strain by using a simple model, based on the linear response theory, which is validated by a number of accurate first‐principles calculations for intermixed interfaces. © 1996 American Institute of Physics.
Organisation	CCLRC , CSE , CSE-CMSG
Keywords	Materials , InAs , GaSb , valence band offset , VBO
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Language	English (EN)

Type	Details	URI(s)	Local file(s)	Year
Journal Article	Appl Phys Lett 69, no. 21 (1996).	doi:10.1063/1.118015		1996