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Persistent URL	http://purl.org/net/epubs/work/30339
Record Status	Checked
Record Id	30339
Title	Thermal stability of hafnium silicate dielectric films deposited by a dual source liquid injection MOCVD
Contributors	PR Chalker (Liverpool U.), PA Marshall (Liverpool U.), RJ Potter (Liverpool U.), TB Joyce (Liverpool U.), AC Jones (Liverpool U.), S Taylor (Liverpool U.), TCQ Noakes (CCLRC Daresbury Lab.), P Bailey (CCLRC Daresbury Lab.)
Abstract	The hafnium and silicon precursors, Hf(NMe2)4 and ButMe2SiOH, have been investigated for the MOCVD of high-? hafnium silicate, (HfO2)1–x–(SiO2)x films for gate dielectric applications. Control of the silica concentration in the hafnium silicate can be achieved by varying the relative precursor ratios up to a saturation level of 35–40% SiO2. The thermal stability of the resulting hafnium silicate films in air has been investigated using medium energy ion scattering. Internal oxidation of the underlying silicon substrate is discernable when the films are annealed in dry air for 15 min over the temperature range 800–1000 °C.
Organisation	CCLRC , SND , MEIS
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Language	English (EN)

Type	Details	URI(s)	Local file(s)	Year
Journal Article	J Mater Sci-Mater El 15, no. 11 (2004): 711-714.	doi:10.1023/B:JMSE.0000043417.59029.d6		2004