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Full Record Details
Persistent URL
http://purl.org/net/epubs/work/50105
Record Status
Checked
Record Id
50105
Title
Dielectric relaxation of lanthanum doped zirconium oxide
Contributors
CZ Zhao (Liverpool U.)
,
S Taylor (Liverpool U.)
,
M Werner (Liverpool U.)
,
PR Chalker (Liverpool U.)
,
RT Murray (Liverpool U.)
,
JM Gaskell (Liverpool U.)
,
AC Jones (Liverpool U.)
Abstract
Lanthanum doped zirconium oxide Lax?Zr1−xO2− films, with La contents, up to x=0.35, were studied. Films were annealed at 900 °C to crystallize them into phases with higher -values. Increasing the La content suppressed the monoclinic phase and stabilized the tetragonal or cubic phase. The highest dielectric constant was obtained for a lightly doped film with a La content of x=0.09, for which a -value of 40 was obtained. This was accompanied by a significant dielectric relaxation, following a single Curie?von Schweidler power-law dependency with frequency, changing to a mixed Curie?von Schweidler and Kohlrausch?Williams?Watts relationships after annealing. The dielectric relaxation was most severe for lightly doped films, which had the highest -values. The dielectric relaxation appears to be related to the size of crystal grains formed during annealing, which was dependent on the doping level.
Organisation
SRS
,
MEIS
,
STFC
Keywords
Materials
Funding Information
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Language
English (EN)
Type
Details
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Year
Journal Article
J Appl Phys
105 (2009): 044102.
doi:10.1063/1.3078038
2009
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